Method and structure of integrated micro electro-mechanical systems and electronic devices using edge bond pads

ABSTRACT

A method for fabricating a monolithic integrated electronic device using edge bond pads as well as the resulting device. The method includes providing a substrate having a surface region and forming one or more integrated micro electro-mechanical systems and electronic devices on a first region overlying the surface region. One or more trench structures can be formed within one or more portions of the first region. A passivation material and a conduction material can be formed overlying the first region and the one or more trench structures. The passivation material and the conduction material can be etched to form one or more bonding pad structure. The resulting device can then be singulated within a vicinity of the one or more bond pad structures to form two or more integrated micro electro-mechanical systems and electronic devices having edge bond pads.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application claims priority to and incorporates byreference, for all purposes, the following pending patent application:U.S. Pat. App. No. 61/322,198, filed Apr. 8, 2010. The present inventionalso incorporates by reference, for all purposes, the followingco-pending patent applications: U.S. patent application Ser. No.12/859,631, filed Aug. 19, 2010, U.S. patent application Ser. No.12/490,067, filed Jun. 23, 2009, U.S. patent application Ser. No.12/945,087, filed Nov. 12, 2010, and U.S. patent application Ser. No.12/913,440, filed Oct. 27, 2010.

BACKGROUND OF THE INVENTION

The present invention relates generally to integrated devices. Moreparticularly, the present invention provides a method for fabricating anintegrated electronic device using edge bond pads as well as a deviceusing edge bond pads. More specifically, the present invention providesa method for forming a passivation material and a conduction materialoverlying one or more integrated micro electronic mechanical systems,commonly termed “MEMS” or devices formed overlying a substrate as wellas the resulting device. Merely by way of example, the integrated devicecan include at least an accelerometer, an angular rate sensor, amagnetic field sensor, a pressure sensor, a microphone, a humiditysensor, a temperature sensor, a chemical sensor, a biosensor, aninertial sensor, and others. Additionally, the other applicationsinclude at least a sensor application or applications, systemapplications, and broadband applications, among others. But it will berecognized that the invention has a much broader range of applicability.

Research and development in integrated microelectronics have continuedto produce astounding progress in CMOS and MEMS. CMOS technology hasbecome the predominant fabrication technology for integrated circuits(IC). MEMS, however, continues to rely upon conventional processtechnologies. In layman's terms, microelectronic ICs are the “brains” ofan integrated device which provides decision-making capabilities,whereas MEMS are the “eyes” and “arms” that provide the ability to senseand control the environment. Some examples of the widespread applicationof these technologies are the switches in radio frequency (RF) antennasystems, such as those in the iPhone™ device by Apple, Inc. ofCupertino, Calif., and the Blackberry™ phone by Research In MotionLimited of Waterloo, Ontario, Canada, and accelerometers insensor-equipped game devices, such as those in the Wii™ controllermanufactured by Nintendo Company Limited of Japan. Though they are notalways easily identifiable, these technologies are becoming ever moreprevalent in society every day.

Beyond consumer electronics, use of IC and MEMS technology has limitlessapplications through modular measurement devices such as accelerometers,angular rate sensors, actuators, and other sensors. In conventionalvehicles, accelerometers and angular rate sensors are used to deployairbags and trigger dynamic stability control functions, respectively.MEMS gyroscopes can also be used for image stabilization systems invideo and still cameras, and automatic steering systems in airplanes andtorpedoes. Biological MEMS (Bio-MEMS) implement biosensors and chemicalsensors for Lab-On-Chip applications, which integrate one or morelaboratory functions on a single millimeter-sized chip only. Otherapplications include Internet and telephone networks, security andfinancial applications, and health care and medical systems. Asdescribed previously, ICs and MEMS can be used to practically engage invarious type of environmental interaction.

Although highly successful, ICs and in particular MEMS still havelimitations. Similar to IC development, MEMS development, which focuseson increasing performance, reducing size, and decreasing cost, continuesto be challenging. Additionally, applications of MEMS often requireincreasingly complex microsystems that desire greater computationalpower. Unfortunately, such applications generally do not exist. Theseand other limitations of conventional MEMS and ICs may be furtherdescribed throughout the present specification and more particularlybelow.

From the above, it is seen that techniques for improving operation ofintegrated circuit devices and MEMS are highly desired.

BRIEF SUMMARY OF THE INVENTION

According to the present invention, techniques related generally tointegrated devices and systems are provided. More particularly, thepresent invention provides a method for fabricating an integratedelectronic device using edge bond pads as well as a device using edgebond pads. More specifically, the present invention provides a methodfor forming a passivation material and a conduction material overlyingone or more integrated micro electro-mechanical systems and electronicdevices formed overlying a substrate as well as the resulting device.Merely by way of example, the integrated device can include at least anaccelerometer, a gyroscope, a magnetic sensor, a pressure sensor, amicrophone, a humidity sensor, a temperature sensor, a chemical sensor,a biosensor, an inertial sensor, and others. Additionally, the otherapplications include at least a sensor application or applications,system applications, and broadband applications, among others. But itwill be recognized that the invention has a much broader range ofapplicability.

In a specific embodiment, the present invention provides a method forfabricating an integrated electronic device using edge bond pads as wellas a device using edge bond pads device. The method includes providing asubstrate having a surface region and forming one or more integratedmicro electro-mechanical systems and electronic devices on a firstregion overlying the surface region. Each of the integrated microelectro-mechanical systems and electronic devices can have one or morecontact regions. The first region can also have a first surface region.One or more trench structures can be formed within one or more portionsof the first region. A passivation material can be formed overlying thefirst region and the one or more trench structures. One or more portionsof the passivation material can be removed within a vicinity of one ormore of the contact regions. A conduction material can be formedoverlying the passivation material, the one or more trench structures,and one or more of the contact regions. One or more portions of theconduction material can be removed within a vicinity of one or more ofthe contact regions to form one or more bond pad structures. Theresulting device can then be singulated within a vicinity of the one ormore bond pad structures to form two or more integrated microelectro-mechanical systems and electronic devices having edge bond pads.

In a specific embodiment, the device includes a substrate having asurface region and one or more integrated micro electro-mechanicalsystems and electronic devices on a first region overlying the surfaceregion. Each of the integrated micro electro-mechanical systems andelectronic devices can have one or more contact regions. The firstregion can also have a first surface region. The device can also haveone or more trench structures within one or more portions of the firstregion. The device can have a passivation material overlying the firstregion and the one or more trench structures. The passivation materialcan have one or more portions removed within a vicinity of one or moreof the contact regions. The device can have a conduction materialoverlying the passivation material, the one or more trench structures,and one or more of the contact regions. The device can also have one ormore portions of the conduction material removed within a vicinity ofone or more of the contact regions to form one or more bond padstructures. The device can also have one or more edge bond padstructures within a vicinity of the one or more bond pad structures. Theone or more edge bond pad structures can be formed by a singulationprocess within a vicinity of the one or more bond pad structures.

Many benefits are achieved by way of the present invention overconventional techniques. For example, the present technique provides aneasy to use process that relies upon conventional technology. In someembodiments, the method provides higher device yields in dies per waferwith the integrated approach or provides for easier integration of afabricated device with other devices. Additionally, the method providesa process and system that are compatible with conventional processtechnology without substantial modifications to conventional equipmentand processes. Preferably, the invention provides for an improved MEMSdevice system and related applications for a variety of uses. In one ormore embodiments, the present invention provides for all MEMS andrelated applications, which may be integrated on one or more CMOS devicestructures. Depending upon the embodiment, one or more of these benefitsmay be achieved. These and other benefits will be described in morethroughout the present specification and more particularly below.

Various additional objects, features and advantages of the presentinvention can be more fully appreciated with reference to the detaileddescription and accompanying drawings that follow

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified flow diagram of a method for fabricating anintegrated electronic device according to an embodiment of the presentinvention;

FIG. 2 is a simplified top diagram of an integrated electronic deviceaccording to an embodiment of the present invention;

FIG. 3 is a simplified perspective diagram of an integrated electronicdevice according to an embodiment of the present invention;

FIG. 4 is a simplified top diagram of an integrated electronic deviceaccording to an embodiment of the present invention;

FIG. 5 is a simplified perspective diagram of an integrated electronicdevice according to an embodiment of the present invention;

FIG. 6 is a simplified perspective diagram of an integrated electronicdevice according to an embodiment of the present invention;

DETAILED DESCRIPTION OF THE INVENTION

According to the present invention, techniques related generally tointegrated devices and systems are provided. More particularly, thepresent invention provides a method for fabricating an integratedelectronic device using edge bond pads. More specifically, the presentinvention provides a method for patterning one or more semiconductorlayers to form one or more air dielectric regions within an integratedCMOS and MEMS device. Merely by way of example, the MEMS devices caninclude at least an accelerometer, a gyroscope, a magnetic sensor, apressure sensor, a microphone, a humidity sensor, a temperature sensor,a chemical sensor, a biosensor, an inertial sensor, and others.Additionally, the other applications include at least a sensorapplication or applications, system applications, and broadbandapplications, among others. But it will be recognized that the inventionhas a much broader range of applicability.

FIG. 1 is a simplified flow diagram illustrating a method of fabricatingan integrated electronic device using edge bond pads according to anembodiment of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims herein. One ofordinary skill in the art would recognize many other variations,modifications, and alternatives. It is also understood that the examplesand embodiments described herein are for illustrative purposes only andthat various modifications or changes in light thereof will be suggestedto persons skilled in the art and are to be included within the spiritand purview of this process and scope of the appended claims.

As shown in FIG. 1, the present method can be briefly outlined below.

1. Start;

2. Provide a substrate having a surface region;

3. Form one or more devices within a first region overlying the surfaceregion;

4. Form one or more trench structures within the first region;

5. Form an enclosure housing the devices;

6. Form a passivation material overlying the first region;

7. Remove one or more portions of the passivation material;

8. Form a conduction material overlying the passivation material;

9. Remove one or more portions of the conduction material;

10. Singulate resulting device; and

11. Stop.

These steps are merely examples and should not unduly limit the scope ofthe claims herein. As shown, the above method provides a way offabricating an integrated electronic device using edge bond padsaccording to an embodiment of the present invention. One of ordinaryskill in the art would recognize many other variations, modifications,and alternatives. For example, various steps outlined above may beadded, removed, modified, rearranged, repeated, and/or overlapped, ascontemplated within the scope of the invention.

As shown in FIG. 1, method 100 begins at start, step 102. The presentmethod provides a fabrication method for forming an integratedelectronic device using edge bond pads. Many benefits are achieved byway of the present invention over conventional techniques. For example,the present technique provides an easy to use process that relies uponconventional technology. In some embodiments, the method provides higherdevice yields in dies per wafer with the integrated approach.Additionally, the method provides a process and system that arecompatible with conventional process technology without substantialmodifications to conventional equipment and processes. Preferably, theinvention provides for an improved integrated micro electro-mechanicalsystems and electronic devices and related methods for a variety ofuses. Depending upon the embodiment, one or more of these benefits maybe achieved. These and other benefits will be described in morethroughout the present specification and more particularly below.

Following step 102, fabrication method 100 involves providing asubstrate having a surface region, step 104. In a specific embodiment,the substrate can be a buried oxide (BOX) substrate. In another specificembodiment, the substrate can include an epitaxial (EPI) material. Infurther embodiments, the substrate can have a silicon, single crystalsilicon, or polycrystalline silicon material. Those skilled in the artwill recognize other variations, modifications, and alternatives.

In an embodiment, the substrate can have a surface region and a firstregion can be a region overlying the surface region. One or moreintegrated micro electro-mechanical systems and electronic devices canbe formed on the first region overlying the surface region, step 106.The first region can have a first surface region. In a specificembodiment, the one or more integrated micro electro-mechanical systemsand electronic devices can include transistor devices, metal layers, viastructures, and others. The integrated micro electro-mechanical systemsand electronic devices can also include a conduction material, a metalmaterial, a metal alloy material, an insulating material, a dielectricmaterial, or other materials or combinations thereof. Additionally, theintegrated micro electro-mechanical systems and electronic devices caninclude integrated CMOS circuit devices, MEMS devices, anisotropicmagnetic resonance (AMR) devices, or other devices or combinationsthereof. In further embodiments, additional transistors, metal layers,and structures can be added. Each of the integrated microelectro-mechanical systems and electronic devices can have one or morecontact regions. Each of the contact regions can include one or morebond pads, bonding structures, or conductive regions, as well as others.The fabrication of the one or more integrated micro electro-mechanicalsystems and electronic devices can be done through foundry-compatibleprocesses. Of course, there can be other variations, modifications, andalternatives.

Following the formation of integrated micro electro-mechanical systemsand electronic devices, one or more trench structures can be formedwithin one or more portions of the first region, step 108. In anembodiment, the one or more trench structures can be formed from a wetetching, dry etching, or mechanical process. In a specific embodiment,the one or more trench structures can be formed from a deep reactive-ionetching (DRIE) process. As stated previously, there can be othervariations, modifications, and alternatives.

After the one or more trench structures are formed, an enclosure can beformed to house the one or more integrated micro electro-mechanicalsystems and electronic devices, step 110. The enclosure can include asilicon material, an insulating material, or other material orcombination thereof. Following the formation of the enclosure, apassivation material can be formed overlying the first region the one ormore trench structures, the enclosure, and one or more of the contactregions, step 112. In a specific embodiment, the passivation materialcan include an insulating material. The insulating material can includea dielectric material, or other material or combination thereof. One ormore portions of the passivation material can also be removed within avicinity of one or more of the contact regions of the integrated microelectro-mechanical systems and electronic devices and the one or moretrench structures, step 114. In a specific embodiment, the removalprocess of the passivation material can include a patterning process, oran etching process, or other processes. Again, there can be othervariations, modifications, and alternatives.

A conduction material can then be formed overlying the first region theone or more trench structures, the enclosure, and one or more of thecontact regions step 116. In a specific embodiment, the conductionmaterial can include a metal material, a metal alloy, other conductivematerials or combinations thereof. One or more portions of theconduction material can also be removed within a vicinity of one or moreof the contact regions of the integrated micro electro-mechanicalsystems and electronic devices and the one or more trench structures toform one or more bond pad structures, step 118. In a specificembodiment, the removal process of the conduction material can include apatterning process, or an etching process, or other processes. Again,there can be other variations, modifications, and alternatives.

Once the passivation material and the conduction material have beenformed and patterned, the resulting device can be singulated within avicinity of the one or more bond pad structures to form two or moreintegrated devices having one or more edge bond pad structures. In anembodiment, the singulation process can include a dicing, an etching, ora laser scribing process. Of course, there can be other variations,modifications, and alternatives.

The above sequence of processes provides a fabrication method forforming an integrated electronic device using edge bond pads accordingto an embodiment of the present invention. As shown, the method uses acombination of steps including providing a substrate, forming integratedmicro electro-mechanical systems and electronic devices, forming anenclosure, forming a passivation material, removing one or more portionsof the passivation material, forming a conduction material, removing oneor more portions of the conduction material, and singulating theresulting device. Other alternatives can also be provided where stepsare added, one or more steps are removed, or one or more steps areprovided in a different sequence without departing from the scope of theclaims herein. Further details of the present method can be foundthroughout the present specification.

FIG. 2 is a simplified top diagram of an integrated electronic deviceaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of the claimsherein. One of ordinary skill in the art would recognize many othervariations, modifications, and alternatives. As shown, device 200includes a substrate 210, one or more integrated microelectro-mechanical systems and electronic devices 220, one or moretrench structures 230, a passivation layer 240, and a conduction layer250. Device 200 shown in this figure can represent an integratedelectronic device prior to singulation, as referred to previously inFIG. 1. Those skilled in the art will recognize other variations,modifications, and alternatives.

In an embodiment, substrate 210 can have a surface region. In a specificembodiment, the substrate can be a buried oxide (BOX) substrate. Inanother specific embodiment, the substrate can include an epitaxial(EPI) material. In further embodiments, the substrate can have asilicon, single crystal silicon, or polycrystalline silicon material.Those skilled in the art will recognize other variations, modifications,and alternatives.

In an embodiment, one or more integrated micro electro-mechanicalsystems and electronic devices 220 can be formed on a first regionoverlying the surface region. The first region can have a first surfaceregion. In a specific embodiment, one or more integrated microelectro-mechanical systems and electronic devices 220 can includetransistor devices, metal layers, via structures, and others. Integratedmicro electro-mechanical systems and electronic devices 220 can alsoinclude a conduction material, a metal material, a metal alloy material,an insulating material, a dielectric material, or other materials orcombinations thereof. Additionally, integrated micro electro-mechanicalsystems and electronic devices 220 can include integrated CMOS circuitdevices, MEMS devices, anisotropic magnetic resonance (AMR) devices, orother devices or combinations thereof. In further embodiments,additional transistors, metal layers, and structures can be added. Eachof integrated micro electro-mechanical systems and electronic devices220 can have one or more contact regions. Each of the contact regionscan include one or more bond pads, bonding structures, or conductiveregions, as well as others. The fabrication of one or more integratedmicro electro-mechanical systems and electronic devices 220 can be donethrough foundry-compatible processes. Of course, there can be othervariations, modifications, and alternatives.

In an embodiment, one or more trench structures 230 can be formed withinone or more portions of the first region. In a specific embodiment, oneor more trench structures 230 can be formed from a wet etching, dryetching, or mechanical process. Also, one or more trench structures 230can be formed from a deep reactive-ion etching (DRIE) process. As statedpreviously, there can be other variations, modifications, andalternatives.

Device 200 can also have an enclosure formed to house one or moreintegrated micro electro-mechanical systems and electronic devices 220.The enclosure can include a silicon material, an insulating material, orother material or combination thereof. In an embodiment, passivationmaterial 240 can be formed overlying the first region one or more trenchstructures 230, the enclosure, and one or more of the contact regions.In a specific embodiment, passivation material 240 can include aninsulating material. The insulating material can include a dielectricmaterial, or other material or combination thereof. One or more portionsof passivation material 240 can also be removed within a vicinity of oneor more of the contact regions of integrated micro electro-mechanicalsystems and electronic devices 220 and one or more trench structures230. In a specific embodiment, the removal process of passivationmaterial 240 can include a patterning process, or an etching process, orother processes. Again, there can be other variations, modifications,and alternatives.

In an embodiment, conduction material 250 can include a metal material,a metal alloy, other conductive materials or combinations thereof. Oneor more portions of conduction material 250 can also be removed within avicinity of one or more of the contact regions of integrated microelectro-mechanical systems and electronic devices 220 and one or moretrench structures 230 to form one or more bond pad structures. In aspecific embodiment, the removal process of conduction material 250 caninclude a patterning process, or an etching process, or other processes.Again, there can be other variations, modifications, and alternatives.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

FIG. 3 is a simplified perspective diagram of a sensor device orelectronic device according to an embodiment of the present invention.More particularly, FIG. 3 illustrates device 300 prior to singulation.This diagram is merely an example, which should not unduly limit thescope of the claims herein. One of ordinary skill in the art wouldrecognize many other variations, modifications, and alternatives. Asshown, device 300 includes a first substrate member 310, at least onesensor or electronic device 320, at least one trench structure(s) 330, adielectric layer 340, and a conduction layer 350. Device 300 shown inthis figure can represent a sensor device or electronic device prior tosingulation, as referred to previously in FIG. 1. A detailed descriptionregarding the structure and the elements device 300 can be found abovein the description for FIG. 2. Features of this embodiment are moreclearly shown in close-up 301. Those skilled in the art will recognizeother variations, modifications, and alternatives.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

FIG. 4 is a simplified top diagram of an integrated electronic deviceaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of the claimsherein. One of ordinary skill in the art would recognize many othervariations, modifications, and alternatives. As shown, device 400includes a substrate 410, one or more integrated microelectro-mechanical systems and electronic devices 420, one or moretrench structures 430, a passivation layer 440, a conduction layer 450,and one or more edge bond pad structures. Device 400 shown in thisfigure can represent an integrated electronic device followingsingulation, as referred to previously in FIG. 1. Those skilled in theart will recognize other variations, modifications, and alternatives.

In an embodiment, substrate 410 can have a surface region. In a specificembodiment, the substrate can be a buried oxide (BOX) substrate. Inanother specific embodiment, the substrate can include an epitaxial(EPI) material. In further embodiments, the substrate can have asilicon, single crystal silicon, or polycrystalline silicon material.Those skilled in the art will recognize other variations, modifications,and alternatives.

In an embodiment, one or more integrated micro electro-mechanicalsystems and electronic devices 420 can be formed on a first regionoverlying the surface region. The first region can have a first surfaceregion. In a specific embodiment, one or more integrated microelectro-mechanical systems and electronic devices 420 can includetransistor devices, metal layers, via structures, and others. Integratedmicro electro-mechanical systems and electronic devices 420 can alsoinclude a conduction material, a metal material, a metal alloy material,an insulating material, a dielectric material, or other materials orcombinations thereof. Additionally, integrated micro electro-mechanicalsystems and electronic devices 420 can include integrated CMOS circuitdevices, MEMS devices, anisotropic magnetic resonance (AMR) devices, orother devices or combinations thereof. In further embodiments,additional transistors, metal layers, and structures can be added. Eachof integrated micro electro-mechanical systems and electronic devices420 can have one or more contact regions. Each of the contact regionscan include one or more bond pads, bonding structures, or conductiveregions, as well as others. The fabrication of one or more integratedmicro electro-mechanical systems and electronic devices 420 can be donethrough foundry-compatible processes. Of course, there can be othervariations, modifications, and alternatives.

In an embodiment, one or more trench structures 430 can be formed withinone or more portions of the first region. In a specific embodiment, oneor more trench structures 430 can be formed from a wet etching, dryetching, or mechanical process. Also, one or more trench structures 430can be formed from a deep reactive-ion etching (DRIE) process. As statedpreviously, there can be other variations, modifications, andalternatives.

Device 400 can also have an enclosure formed to house one or moreintegrated micro electro-mechanical systems and electronic devices 420.The enclosure can include a silicon material, an insulating material, orother material or combination thereof. In an embodiment, passivationmaterial 440 can be formed overlying the first region one or more trenchstructures 430, the enclosure, and one or more of the contact regions.In a specific embodiment, passivation material 440 can include aninsulating material. The insulating material can include a dielectricmaterial, or other material or combination thereof. One or more portionsof passivation material 440 can also be removed within a vicinity of oneor more of the contact regions of integrated micro electro-mechanicalsystems and electronic devices 420 and one or more trench structures430. In a specific embodiment, the removal process of passivationmaterial 440 can include a patterning process, or an etching process, orother processes. Again, there can be other variations, modifications,and alternatives.

In an embodiment, conduction material 450 can include a metal material,a metal alloy, other conductive materials or combinations thereof. Oneor more portions of conduction material 450 can also be removed within avicinity of one or more of the contact regions of integrated microelectro-mechanical systems and electronic devices 420 and one or moretrench structures 430 to form one or more bond pad structures. In aspecific embodiment, the removal process of conduction material 450 caninclude a patterning process, or an etching process, or other processes.Again, there can be other variations, modifications, and alternatives.

In an embodiment, the one or more edge bond pads can be operably coupledto the conduction material 450 and the passivation material 440. In aspecific embodiment, the one or more edge bond pad structures can beformed by a singulation process within a vicinity of the one or morebond pad structures. In an embodiment, the singulation process caninclude a dicing, an etching, or a laser scribing process. Of course,there can be other variations, modifications, and alternatives.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

FIG. 5 is a simplified perspective diagram of an integrated electronicdevice according to an embodiment of the present invention. This diagramis merely an example, which should not unduly limit the scope of theclaims herein. One of ordinary skill in the art would recognize manyother variations, modifications, and alternatives. As shown, device 500includes a substrate 510, one or more integrated microelectro-mechanical systems and electronic devices 520, one or moretrench structures 530, a passivation layer 540, a conduction layer 550,and one or more edge bond pad structures. Device 500 shown in thisfigure can represent an integrated electronic device followingsingulation, as referred to previously in FIG. 1. A detailed descriptionregarding the structure and the elements device 500 can be found abovein the description for FIG. 4. Those skilled in the art will recognizeother variations, modifications, and alternatives.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

FIG. 6 is a simplified perspective diagram of an integrated electronicdevice according to an embodiment of the present invention. This diagramis merely an example, which should not unduly limit the scope of theclaims herein. One of ordinary skill in the art would recognize manyother variations, modifications, and alternatives. As shown, device 600includes a substrate 610, one or more integrated microelectro-mechanical systems and electronic devices 620, one or moretrench structures 630, a passivation layer 640, a conduction layer 650,and one or more edge bond pad structures. A detailed descriptionregarding the structure and the elements device 600 can be found abovein the description for FIG. 4. Features of this embodiment are shownmore clearly in close-up 601. Those skilled in the art will recognizeother variations, modifications, and alternatives.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

1. A method for fabricating monolithic integrated microelectro-mechanical systems and electronic devices, the methodcomprising: providing a substrate having a surface region; forming oneor more integrated micro electro-mechanical systems and electronicdevices provided on a first region overlying the surface region, each ofthe integrated micro electro-mechanical systems and electronic deviceshaving one or more contact regions, the first region having a firstsurface region; forming one or more trench structures within one or moreportions of the first region; forming a passivation material overlyingthe first region and the one or more trench structures; removing one ormore portions of the passivation material within a vicinity of one ormore of the contact regions and the one or more trench structures;forming a conduction material overlying the passivation material, theone or more trench structures, and one or more of the contact regions;removing one or more portions of the conduction material within avicinity of one or more of the contact regions and the one or moretrench structures to form one or more bond pad structures; andsingulating the resulting device within a vicinity of the one or morebond pad structures to form two or more integrated microelectro-mechanical systems and electronic devices having one or moreedge bond pad structures.
 2. The method of claim 1 wherein the one ormore integrated micro electro-mechanical systems and electronic devicescomprise one or more devices selected from a group consisting of: CMOSintegrated circuit devices, MEMS devices, and anisotropicmagnetoresistance (AMR) devices.
 3. The method of claim 1 wherein theone or more contact regions comprise one or more bond pads, bondingstructures, or conductive regions.
 4. The method of claim 1 wherein theone or more trench structures are formed from a wet etching, dryetching, or mechanical process.
 5. The method of claim 1 wherein the oneor more trench structures are formed from a deep reactive-ion etching(DRIE) process.
 6. The method of claim 1 wherein the passivationmaterial comprises an insulating material or dielectric material.
 7. Themethod of claim 1 wherein the removing of one or more portions of thepassivation material comprises a wet etching, dry etching, or mechanicalprocess.
 8. The method of claim 1 wherein the conduction materialcomprises a metal layer or metal alloy layer.
 9. The method of claim 1wherein the removing of the one or more portions of the conductionmaterial comprises a wet etching, dry etching, or mechanical process.10. The method of claim 1 wherein the singulating of the resultingdevice comprises a dicing, an etching, or a laser scribing process. 11.A method for fabricating monolithic integrated micro electro-mechanicalsystems and electronic devices, the method comprising: providing asilicon substrate having a surface region; forming one or more CMOSintegrated circuit devices provided on a first region overlying thesurface region, each of the CMOS integrated circuit devices having oneor more contact regions, the first region having a first surface region;forming one or more free standing MEMS devices overlying one or morefirst portions of the first surface region; forming an enclosure housingthe one or more free standing MEMS devices, the enclosure beingspatially disposed overlying the first surface region; forming one ormore trench structures within one or more portions of the first region,the one or more trench structures being formed via a DRIE process;forming a passivation material overlying the first region and the one ormore trench structures; removing one or more portions of the passivationmaterial within a vicinity of one or more of the contact regions;forming a conduction material overlying the passivation material, theone or more trench structures, and one or more of the contact regions;removing one or more portions of the conduction material within avicinity of one or more of the contact regions and the one or moretrench structures to form one or more bond pad structures; andsingulating the resulting device within a vicinity of the one or morebond pad structures to form two or more integrated microelectro-mechanical systems and electronic devices having one or moreedge bond pad structures.